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| (R) MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. 2 1 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CEO V EBO IC P tot T stg Tj Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Power Dissipation at T case 25 C o Value MJE340 MJE350 300 3 0.5 20.8 -65 to 150 150 Unit V V A W o o Storage Temperature Max Operating Junction Temperature C C For PNP types voltage and current values are negative. April 2003 1/5 MJE340 / MJE350 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 6.0 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 300 V V EB = 3 V I C = 1 mA 300 Min. Typ. Max. 100 100 Unit A A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) h FE DC Current Gain I C = 50 mA V CE = 10 V 30 240 Pulsed: Pulse duration = 300s, duty cycle 2% Safe Operating Area Derating Curve 2/5 MJE340 / MJE350 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) 3/5 MJE340 / MJE350 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10o 3 7.4 10.5 0.7 0.40 2.4 1.0 15.4 2.2 4.4 3.8 3.2 2.54 0.084 0.05 0.011 10o 0.118 TYP. MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 0.126 0.100 inch TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 DIM. 1: Base 2: Collector 3: Emitter 0016114/B 4/5 MJE340 / MJE350 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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